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1

The improved performance of GaAs micromachined power sensor microsystem

T Lalinský, Š Haščı́k, Ž Mozolová, E Burian, M Držı́k

Journal:

Sensors and Actuators A: Physical

Year:

1999

Language:

english

File:

PDF, 690 KB

english, 1999

2

Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

T. Lalinský, G. Vanko, M. Vallo, M. Držík, J. Bruncko, J. Jakovenko, V. Kutiš, I. Rýger, Š. Haščík, M. Husák

Journal:

Sensors and Actuators A: Physical

Year:

2011

Language:

english

File:

PDF, 818 KB

english, 2011

3

SPIE Proceedings [SPIE SPIE Microtechnologies - Barcelona, Spain (Monday 4 May 2015)] Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems - Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

Sánchez-Rojas, José Luis, Brama, Riccardo, Zehetner, J., Vanko, G., Dzuba, J., Ryger, I., Lalinsky, T., Benkler, Manuel, Lucki, Michal

Year:

2015

Language:

english

File:

PDF, 1.22 MB

english, 2015

4

A three layer model of planar alloyed ohmic contacts to n-GaAs

M. Porges, T. Lalinský, Ẑ Mozolová, J. Kuzmík

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

5

Characterization of WNx metallization prepared by ion implantation of nitrogen

D Gregušová, T Lalinský, Ž Mozolová, D Machajdik, I Pochaba, I Vavra, M Porges

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 707 KB

english, 1994

6

Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures

K. Čičo, J. Kuzmík, D. Gregušová, R. Stoklas, T. Lalinský, A. Georgakilas, D. Pogany, K. Fröhlich

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 251 KB

english, 2007

7

C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures

J. Osvald, T. Lalinský, G. Vanko, Š. Haščík, A. Vincze

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 296 KB

english, 2010

8

Thermo-mechanical characterization of micromachined GaAs-based thermal converter using contactless optical methods

T. Lalinský, M. Držík, J. Chlpík, M. Krnáč, Š. Haščík, Ž. Mozolová, I. Kostič

Journal:

Sensors and Actuators A: Physical

Year:

2005

Language:

english

File:

PDF, 344 KB

english, 2005

9

GaAs based micromachined thermal converter for gas sensors

T. Lalinský, M. Držík, J. Jakovenko, G. Vanko, Ž. Mozolová, Š. Haščík, J. Chlpík, I. Hotový, V. Řeháček, I. Kostič, L. Matay, M. Husák

Journal:

Sensors and Actuators A: Physical

Year:

2008

Language:

english

File:

PDF, 696 KB

english, 2008

10

Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT

G. Vanko, T. Lalinský, Š. Haščík, I. Rýger, Ž. Mozolová, J. Škriniarová, M. Tomáška, I. Kostič, A. Vincze

Journal:

Year:

2009

Language:

english

File:

PDF, 298 KB

english, 2009

11

Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure

T. Lalinský, I. Rýger, L. Rufer, G. Vanko, Š. Haščík, Ž. Mozolová, M. Tomáška, A. Vincze, F. Uherek

Journal:

Year:

2009

Language:

english

File:

PDF, 324 KB

english, 2009

12

Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique.

D. Pogany, J. Kuzmik, J. Darmo, M. Litzenberger, S. Bychikhin, K. Unterrainer, Z. Mozolova, S. Hascik, T. Lalinsky, E. Gornik

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 946 KB

2002

13

Performance of GaAs micromachined microactuator

T. Lalinský, E. Burian, M. Drz̆ı́k, Š. Hašc̆ı́k, Z̆. Mozolová, J. Kuzmı́k, Z. Hatzopoulos

Journal:

Sensors and Actuators A: Physical

Year:

2000

Language:

english

File:

PDF, 231 KB

english, 2000

14

Thermal simulation and characterization of gaas micromachined power-sensor microsystems

E. Burian, D. Pogany, T. Lalinský, N. Seliger, E. Gornik

Journal:

Sensors and Actuators A: Physical

Year:

1998

Language:

english

File:

PDF, 634 KB

english, 1998

15

On the relationship between charge- and current-based DLTS

I. Thurzo, T. Lalinský

Journal:

physica status solidi (a)

Year:

1982

Language:

english

File:

PDF, 176 KB

english, 1982

16

Barrier height enhancement in WSix/GaAs Schottky diodes by rapid thermal annealing

J. Osvald, T. Lalinský

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1993

Language:

english

File:

PDF, 376 KB

english, 1993

17

The effect of oxygen in WNxfilms on thermal stability of WNx/GaAs interfaces

D. Gregušová, T. Lalinský, ž. Mozolová, J. Breza, P. Vogrinčič

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1993

Language:

english

File:

PDF, 262 KB

english, 1993

18

Properties of WNx/GaAs Schottky contacts prepared by ion implantation of nitrogen

T. Lalinsky, J. Kuzmík, D. Gregušová, Ž. Mozolová, J. Breza, M. Feciško, P. Seidl

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1992

Language:

english

File:

PDF, 435 KB

english, 1992

19

Gallium arsenide suspended microheater for MEMS sensor arrays

I. Hotovy, V. Rehacek, F. Mika, T. Lalinsky, S. Hascik, G. Vanko, M. Drzik

Journal:

Microsystem Technologies

Year:

2008

Language:

english

File:

PDF, 458 KB

english, 2008

20

Design and simulation of micromechanical thermal converter for RF power sensor microsystem

Jiri Jakovenko, Miroslav Husak, Tibor Lalinsky

Journal:

Microelectronics Reliability

Year:

2004

Language:

english

File:

PDF, 532 KB

english, 2004

21

AlGaN/GaN C-HEMT structures for dynamic stress detection

Gabriel Vanko, Milan Držík, Martin Vallo, Tibor Lalinský, Vladimír Kutiš, Stanislav Stančík, Ivan Rýger, Anna Benčurová

Journal:

Sensors and Actuators A: Physical

Year:

2011

Language:

english

File:

PDF, 651 KB

english, 2011

22

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R., Allsopp, D.W.E.

Journal:

Sensors and Actuators A: Physical

Year:

2013

Language:

english

File:

PDF, 621 KB

english, 2013

23

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Investigation of deep energy levels in heterostructures based on GaN by DLTS

Stuchlikova, L., Sebok, J., Rybar, J., Petrus, M., Nemec, M., Harmatha, L., Benkovska, J., Kovac, J., Skriniarova, J., Lalinsky, T., Paskiewicz, R., Tlaczala, M.

Year:

2010

Language:

english

File:

PDF, 153 KB

english, 2010

24

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Preparation and properties of micro-hotplates for gas sensors based on GaAs

Tengeri, D., Pullmannova, A., Hotovy, I., Rehacek, V., Hascik, S., Lalinsky, T.

Year:

2008

Language:

english

File:

PDF, 1.73 MB

english, 2008

25

Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

Zehetner, J., Kraus, S., Lucki, M., Vanko, G., Dzuba, J., Lalinsky, T.

Journal:

Microsystem Technologies

Year:

2016

Language:

english

File:

PDF, 1.76 MB

english, 2016

26

SPIE Proceedings [SPIE SPIE Microtechnologies - Grenoble, France (Wednesday 24 April 2013)] Smart Sensors, Actuators, and MEMS VI - MEMS pressure sensor fabricated by advanced bulk micromachining techniques

Vanko, Gabriel, Hudek, Peter, Zehetner, Johann, Dzuba, Jaroslav, Choleva, Pavlina, Vallo, Martin, Rýger, Ivan, Lalinský, Tibor, Schmid, Ulrich, Sánchez de Rojas Aldavero, José Luis, Leester-Schaedel,

Year:

2013

Language:

english

File:

PDF, 450 KB

english, 2013

27

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process

Babchenko, O., Vanko, G., Dzuba, J., Izak, T., Vojs, M., Lalinsky, T., Kromka, A.

Year:

2016

File:

PDF, 400 KB

2016

28

Firm Competitiveness Determinants: Results of a Panel Data Analysis

Lalinsky, Tibor

Journal:

SSRN Electronic Journal

Year:

2013

Language:

english

File:

PDF, 527 KB

english, 2013

29

d.c. Performance of short-channel ion-implanted GaAs MESFETs (The role of gate length shortening)

J. Kuzmik, T. Lalinský, Z. Mozolova, M. Porges

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 403 KB

english, 1990

30

Characterization of planar ohmic contacts—The effect of position of probes on contact area

M. Porges, T. Lalinsky

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 150 KB

english, 1992

31

Co-implantation of Mg and Si in GaAs MESFETs

J. Kuzmik, T. Lalinsky, P. Seidl

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 382 KB

english, 1993

32

Asymmetric (Schottky-ohmic) MSM photodetector

M. Porges, J. S̆afranková, T. Lalinský, I. Kostic̆, I.W. Rangelow, F.J. Tegude, D. Jäger

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 149 KB

english, 1995

33

The fabrication of thin GaAs cantilever beams for power sensor microsystem using RIE

Š Haščík, T Lalinský, J Kuzmík, M Porges, Ž Mozolová

Journal:

Year:

1996

Language:

english

File:

PDF, 257 KB

english, 1996

34

C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures

J. Osvald, T. Lalinský, G. Vanko, Š. Haščík, A. Vincze

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 370 KB

english, 2010

35

Role of electrode metallization in performance of semi-insulating GaAs radiation detectors

František Dubecký, Pavol Boháček, Mária Sekáčová, Bohumír Zaťko, Tibor Lalinský, Vladimír Linhart, Andrea Šagátová-Perd’ochová, Ján Mudroň, Stanislav Pospíšil

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2007

Language:

english

File:

PDF, 165 KB

english, 2007

36

AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors

T. Lalinský, L. Rufer, G. Vanko, S. Mir, Š. Haščík, Ž. Mozolová, A. Vincze, F. Uherek

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 369 KB

english, 2008

37

Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

Š. Chromik, P. Gierlowski, M. Španková, E. Dobročka, I. Vávra, V. Štrbík, T. Lalinský, M. Sojková, J. Liday, P. Vogrinčič, J.P. Espinos

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 520 KB

english, 2010

38

Thermomechanical response of membrane-like MEMS component

M. Držík, J. Chlpík, T. Lalinský

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 279 KB

english, 2007

39

Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs

T. Lalinský, G. Vanko, A. Vincze, Š. Haščík, J. Osvald, D. Donoval, M. Tomáška, I. Kostič

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 1.00 MB

english, 2011

40

Piezoelectric response of AlGaN/GaN-based circular-HEMT structures

T. Lalinský, M. Držík, G. Vanko, M. Vallo, V. Kutiš, J. Bruncko, Š. Haščík, J. Jakovenko, M. Husák

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 371 KB

english, 2011

41

GaN, GaAs and Silicon based Micromechanical Free Standing Hot Plates for Gas Sensors

J. Jakovenko, T. Lalinsky, M. Drzik, M. Ivanova, G. Vanko, M. Husak

Journal:

Procedia Chemistry

Year:

2009

Language:

english

File:

PDF, 749 KB

english, 2009

42

AlGaN/GaN C-HEMT structures for dynamic stress detection

Gabriel Vanko, Milan Držík, Martin Vallo, Tibor Lalinský, Vladimír Kutiš, Stanislav Stančík, Ivan Rýger, Ivan Kostič

Journal:

Procedia Engineering

Year:

2010

Language:

english

File:

PDF, 353 KB

english, 2010

43

AlGaN/GaN based SAW-HEMT structures for chemical gas sensors

T. Lalinský, I. Rýger, G. Vanko, M. Tomáška, I. Kostič, S. Haščík, M. Vallo

Journal:

Procedia Engineering

Year:

2010

Language:

english

File:

PDF, 402 KB

english, 2010

44

Preparation of thin GaAs suspended membranes for gas micro-sensors using plasma etching

Š. Haščík, I. Hotový, T. Lalinský, G. Vanko, V. Řeháček, Ž. Mozolová

Journal:

Year:

2007

Language:

english

File:

PDF, 660 KB

english, 2007

45

Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN

G. Vanko, T. Lalinský, Ž. Mozolová, J. Liday, P. Vogrinčič, A. Vincze, F. Uherek, Š. Haščík, I. Kostič

Journal:

Year:

2007

Language:

english

File:

PDF, 405 KB

english, 2007

46

Study of thermal effects in GaAs micromachined power sensor microsystems by an optical interferometer technique

D. Pogany, N. Seliger, T. Lalinský, J. Kuzmík, P. Habaš, P. Hrkút, E. Gornik

Journal:

Microelectronics Journal

Year:

1998

Language:

english

File:

PDF, 586 KB

english, 1998

47

Iridium-based multilayer contacts to n-GaAs

T Lalinský, J Breza, P Vogrinčič, J Osvald, Ž Mozolová, J Šišolák

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 370 KB

english, 1998

48

InGaAs/InGaP HEMTs: technological optimization and analytical modelling

J. Kuzmı&amp, #x0301, k, S. Hasenöhrl, R. Kúdela, Š. Haščı&amp, #x0301, k, Ž. Mozolová, T. Lalinský, P. Vogrinčič, J. Breza, J. Škriniarová, A. Fox, P. Kordoš

Journal:

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

49

T-shaped gates for heterostructure field effect transistors

T. Lalinský, J. Škriniarová, I. Kostič, A. Hart van der, P. Hrkút, Š. Haščı&amp, #x0301, k, L. Matay, Ž. Mozolová, P. Kordoš

Journal:

Year:

2001

Language:

english

File:

PDF, 217 KB

english, 2001

50

Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs

T Lalinský, J Škriniarová, J Kuzmı́k, S Hasenöhrl, A Fox, M Tomáška, Ž Mozolová, T Kovac̆ik, A Krajcer, P Kordoš

Journal:

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

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